| PART |
Description |
Maker |
| SST28VF040A-90-4C-PH SST28SF040A-90-4C-PH SST28SF0 |
4 Mbit (512K x8) SuperFlash EEPROM(4 M(512K x8)超级闪存存储
RESISTOR 62 OHM .5W CARB COMP
4 Mbit (512K x8) SuperFlash EEPROM 4兆位（为512k × 8）超快闪EEPROM
4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PQCC32
4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
(SST28xF040A) 4 Mbit (512K x8) SuperFlash EEPROM
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| A28F400BR-TB A28F400BR-B AB28F400BR-T80 AB28F400BR |
4-MBIT (256K X 16/ 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
4-MBIT (256K X 16, 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
Toggle Switch; Circuitry:DPDT; Switch Operation:On-On; Contact Current Max:6A; Actuator Style:Bat; Switch Terminals:Through Hole; Current Rating:3A; Leaded Process Compatible:Yes; Mounting Type:PCB; Features:Standard Actuator RoHS Compliant: Yes
4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
4-Mbit (256K x 16, 512K x 8) SmartVoltage boot block flash memory. Access speed 80 ns
|
Intel Corporation
Intel Corp.
|
| SST28SF040A SST28SF040A-120 SST28SF040A-120-4C-EH |
4 Mbit (512K x8) SuperFlash EEPROM
4 Mbit (512K x 8) super-flash EEPROM
|
SST[Silicon Storage Technology, Inc]
|
| BBF2805SE BBF2815S BBF2812S BBF2805SK BBF2803SH BB |
3.3V, 20W DC-DC converter
15V, 20W DC-DC converter
12V, 20W DC-DC converter
Analog IC
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL™ Architecture
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL™ Architecture
20W DC-DC Converter(输出功率20WDC-DC转换
|
M.S. Kennedy Corp.
M.S. Kennedy Corporation
|
| CY62157EV30LL-45ZXI CY62157EV30LL-45BVI |
8-Mbit (512K x 16) Static RAM 512K X 16 STANDARD SRAM, 45 ns, PBGA48
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1012DV33-10BGXI |
12-Mbit (512K X 24) Static RAM; Density: 12 Mb; Organization: 512Kb x 24; Vcc (V): 3.0 to 3.6 V; 512K X 24 STANDARD SRAM, 10 ns, PBGA119
|
Cypress Semiconductor, Corp.
|
| CY7C1441AV33 CY7C1443AV33 CY7C1447AV33 |
36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM(36-Mb (1M x 36/2M x 18/512K x 72)流通式SRAM)
|
Cypress Semiconductor Corp.
|
| CY7C1460AV33 |
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM)
|
Cypress Semiconductor Corp.
|
| CY7C1386D-250AXC ICY7C1387D-167BGI ICY7C1387D-167B |
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
|
Cypress Semiconductor
|
| CY7C1386F-167BGXC CY7C1386F-167BGXI CY7C1386F-200B |
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
|
Cypress Semiconductor
|
| CY7C1370DV25 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL Architecture(18-Mb (512K x 36/1M x 18)管道式SRAM（NoBL结构 18兆位（为512k × 36/1M × 18）与总线延迟建筑18 MB的（12k × 36/1M × 18）管道式静态存储器（总线延迟结构）流水线的SRAM
|
Cypress Semiconductor Corp.
|
